TODAY’S PATENT – GAS SUPPLY UNIT AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE GAS SUPPLY UNIT

The said invention (US11396702B2) was invented by Young Hoon Kim, Yong Gyu Han, Dae Youn Kim, Hyun Soo Jang, and Jeong Ho Lee. It was patented by USPTO on July 26^th, 2022. Currently, it stands assigned to ASM IP Holding BV.

The invention pertains to a gas supply unit and substrate processing equipment intended for regulating the deposition of films on specified substrate areas, which is of utmost importance in semiconductor production where consistency is important. Conventional gas supply devices that use showerhead technologies sometimes struggle to provide consistent film thickness distribution across a substrate. This gas supply device solves the problem by including a gas flow channel and divider strategically positioned through holes.

The gas flow channel exhibits a gradual reduction in width from the center towards the perimeter, while the through-holes are strategically placed between the center and edge. This arrangement enhances the ability to regulate gas distribution and film deposition. In addition, the equipment is equipped with RF rods and a controller to regulate the gas supply accurately. Together, these properties guarantee a consistent film layer, even on substrates with intricate geometries, greatly enhancing the quality of deposition and the management of the process in semiconductor fabrication.