TODAY’S PATENT – SEMICONDUCTOR DEVICE

The said invention (US11699763B2) was invented by Dong-Hun Lee and Dong-won Kim, patented by USPTO on July 11^th, 2023. Currently, it stands assigned to Samsung Electronics Co Ltd.

The present invention involves a static random-access memory (SRAM) device with better electrical properties and a logic device that integrates it. SRAM devices are used in computer cache memory devices and portable electronics because they use less power and operate quicker than DRAM devices. Electrical characteristics that affect SRAM device functioning must yet be improved.

The novel idea creates an electrically superior Static Random-Access Memory (SRAM). A logic device with SRAM has also been invented. In this inventive concept, a memory device includes a circuit element with a first inverter, a first load transistor, and a first drive transistor, and a second inverter, a second load transistor, and a second drive transistor, where the input and output nodes of the first and second inverters are cross-connected. This invention further expanded the novelty by including a memory device comprised of a logic region and a static random-access memory (SRAM) region that includes the device.